Samsung has introduced the first NAND flash memory based on the UFS 4.0 standard, which can double the data reading and data writing speed of smartphones.
Even before JEDEC finally specified Universal Flash Storage (UFS) 4.0, Samsung announced the first NAND flash memory based on the expected standard.
The first NAND flash memory based on the UFS 4.0 standard from Samsung should be able to offer a maximum read speed of 4.2 GB/s and a write speed of up to 2.8 GB/s. Compared to the previously installed UFS 3.1 memory, which is specified as reading 2.1 GB/s and writing 1.2 GB/s, this means that the speed has been doubled. The data memories for smartphones that have now been announced are connected to the system with two transmission lanes and are now in no way inferior to fast PCI Express SSDs. However, Samsung does not yet provide information on the maximum IOPS when presenting the chips. Conversely, due to the higher data transfer rates with probably the same power consumption, this means that the battery life can potentially be increased,
Samsung’s UFS 4.0 chips are offered with stacked memory layers and an integrated controller. The presented UFS 4.0 chip is only one millimeter high and should offer a total capacity of one terabyte.
When the first smartphones can be equipped with the new UFS 4.0 chips from Samsung cannot yet be answered.
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